The use of high-K metal gate (HKMG) as a gate material allows the transistor to perform faster gate operation along with reduced current leakage. The use of HKMG transistor solved the problem of current leakage with thin gate oxide. However, further...
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The use of high-K metal gate (HKMG) as a gate material allows the transistor to perform faster gate operation along with reduced current leakage. The use of HKMG transistor solved the problem of current leakage with thin gate oxide. However, further shrinking of nodes beyond 14nm demands change in gate and gate oxide technology to control the current leakage. This problem can be overcome by changing the gate structure from 2D planar to 3D FinFET.
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