Because of SiC physical and electronic properties,silicon carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and
high-power/high-frequency electronic devices,compared with Si and GaAs based...
More
Because of SiC physical and electronic properties,silicon carbide based device are well suitable for short wavelength optoelectronic, high temperature, radiation resistant, and
high-power/high-frequency electronic devices,compared with Si and GaAs based device.
Many researchers know the general SiC application:III-V Nitride Deposition;Optoelectronic Devices;High Power Devices;High Temperature Devices;High Frequency Power
Devices.But few people knows detail applications, here we list some detail application and make some explanations:
1.SiC substrate for X-ray monochromators:such as,using SiC's large d-spacing of about 15 A;
2.SiC substrate for high voltage devices;
3.SiC substrate for diamond film growth by microwave plasma-enhanced chemical vapor deposition;
4.For silicon carbide p-n diode;
5.SiC substrate for optical window: such as for very short (< 100 fs) and intense (> 100 GW/cm2) laser pulses with a wavelength of 1300 nm. It should have a low absorption
coefficient and a low two
Less
