Surface and Coatings Technology 120–121 (1999) 353–357
www.
elsevier.
nl/locate/surfcoat
Formation of hafnium nitride films by medium-energy
ion-beam-assisted deposition
K.
Volz a, M.
Kiuchi b, W.
Ensinger a,*
a Philipps-University Marburg, Department of...
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Surface and Coatings Technology 120–121 (1999) 353–357
www.
elsevier.
nl/locate/surfcoat
Formation of hafnium nitride films by medium-energy
ion-beam-assisted deposition
K.
Volz a, M.
Kiuchi b, W.
Ensinger a,*
a Philipps-University Marburg, Department of Chemistry/Center of Materials Science, D-35032 Marburg, Germany
b Osaka National Research Institute, Material Physics Department, Ikeda, Osaka 563, Japan
Abstract
Hafnium nitride films were formed by evaporation of hafnium atoms from an electron beam evaporator under simultaneous
nitrogen ion bombardment.
The ratio of impinging ions to neutrals has been varied, in order to study its influence on elemental
and phase composition.
The composition of the films was studied by using Rutherford backscattering spectroscopy; their phase
composition was examined by X-ray diffraction.
It is shown that layers with the 1:1 stoichiometry of Hf:N can be formed under
ion irradiation, although hafnium has a great affinity to oxygen.
Among the nitrides
Less
