T h e o p e n – a c c e s s j o u r n a l f o r p h y s i c s
New Journal of Physics
Memory in quantum-dot photoluminescence blinking
Fernando D Stefani1
, Xinhua Zhong2
, Wolfgang Knoll1
,
Mingyong Han2
and Maximilian Kreiter1,3
1
Max Planck Institute for...
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T h e o p e n – a c c e s s j o u r n a l f o r p h y s i c s
New Journal of Physics
Memory in quantum-dot photoluminescence blinking
Fernando D Stefani1
, Xinhua Zhong2
, Wolfgang Knoll1
,
Mingyong Han2
and Maximilian Kreiter1,3
1
Max Planck Institute for Polymer Research, Ackermannweg 10,
D-55128 Mainz, Germany
2
Department of Materials Science, National University of Singapore,
10 Science Drive 4, Lower Kent Ridge Road, 117543, Singapore
E-mail: kreiter@mpip-mainz.
mpg.
de
New Journal of Physics 7 (2005) 197
Received 31 March 2005
Published 19 September 2005
Online at http://www.
njp.
org/
doi:10.
1088/1367-2630/7/1/197
Abstract.
We demonstrate that subsequent on- and off-times of the
luminescence blinking of semiconductor quantum dots (QDs) are correlated,
indicating that the process behind is not memoryless.
A residual memory, which
has been overlooked in previous investigations of the blinking, is found to last
for several (∼40) detected on/off cycles.
No influence of the subst
Less
